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Compound Semiconductor Epitaxial Wafers
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Products - GaAs Based LD/PD Epitaxial Wafer
PRODUCT LIST | |||
Category | Product Name | Applications | Description |
GaAs Based LD/PD Epitaxial Wafer | ● 808nm EEL EPI-WAFER | ★PUMPING ★MEDICAL COSMETOLOGY ★INDUSTRIAL APPLICATION ★INFRARED LIGHTING | Typical Specifications（CW:10W，Po:10W） Threshold Current: 1.5A Operating Voltage:1.8V Slope Efficiency: 1.1W/A Beam Divergence Angle: θ∥≤10°；θ⊥≤34° |
● 905nm EEL EPI-WAFER | ★L(fēng)IDAR ★SECURITY APPLICATION ★MEASUREMENTS | Typical Specifications( (3 Tunnel Junctions,Pulse,Po=75W) Threshold Current: 0.75A Beam Divergence Angle: θ∥≤8°；θ⊥≤25° | |
● 915nm EEL EPI-WAFER | ★PUMPING | Typical Specifications（CW:>25W） Threshold Current: <2A Operating Voltage:1.7V Slope Efficiency: >1.05W/A | |
● 976nm EEL EPI-WAFER | ★PUMPING ★MEDICAL COSMETOLOGY ★L(fēng)ASER AIMING ★L(fēng)ASER DETECTION | Typical Specifications（CW:>25W） Threshold Current: <2A Operating Voltage:1.7V Slope Efficiency: >1.05W/A | |
● VCSEL/PIN WAFERS | ★SENSING ★DATACOM | Typical Specifications Wave: 850nm/940nm | |
